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| PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM800E2Z-66H CM800E2Z-66H q IC...................................................................800A q VCES ....................................................... 3300V q Insulated Type q 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 570.25 190 171 570.25 570.25 6 - M8 NUTS C C C K (C) G E 124 0.25 140 C C C 40 20 E E A (E) CM E E E CIRCUIT DIAGRAM C E G 20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 38 8 - 7MOUNTING HOLES 15 40 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LABEL 29.5 28 Mar. 2001 PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C, IGBT part Conditions Ratings 3300 20 800 1600 800 1600 10400 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 80mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Per 2/3 module) IF = 800A, Clamp diode part IF = 800A dif / dt = -1600A / s, Clamp diode part Junction to case, Clamp diode part Case to fin, conductive grease applied (Per 1/3 module) Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.80 4.00 120 12.0 3.6 5.7 -- -- -- -- 2.80 -- 270 -- -- 0.008 3.00 -- 270 -- 0.008 Max 10 7.5 0.5 4.94 -- -- -- -- -- 1.60 2.00 2.50 1.00 3.64 1.40 -- 0.012 0.024 -- 3.90 1.40 -- 0.024 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W V s C K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2001 PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj=25C COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1600 COLLECTOR CURRENT IC (A) VGE=14V 1200 VGE=15V VGE=20V 800 VGE=13V VGE=12V VGE=11V VGE=10V VCE=10V 1200 800 VGE=9V 400 VGE=8V VGE=7V 0 0 2 4 6 8 10 400 Tj = 25C Tj = 125C 0 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 VGE=15V 10 Tj = 25C 8 IC = 1600A 6 IC = 800A 6 4 4 2 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2 IC = 320A 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) CAPACITANCE VS. VCE (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VGE = 0V, Tj = 25C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies EMITTER CURRENT IE (A) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 Tj=25C Coes Cres 1 2 3 4 5 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2001 EMITTER-COLLECTOR VOLTAGE VEC (V) PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 3 2 100 7 5 3 2 10-1 7 5 td(off) td(on) tr tf VCC = 1650V, VGE = 15V RG = 2.5, Tj = 125C Inductive load 5 7 102 23 5 7 103 23 5 101 7 5 3 2 100 7 5 Irr 103 7 5 3 2 trr 5 7 102 23 5 7 103 23 5 102 7 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 101 7 Single Pulse 5 TC = 25C 3 Rth(j - c) = 0.012K/ W 2 101 7 Single Pulse 5 TC = 25C 3 Rth(j - c) = 0.024K/ W 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) VGE - GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 1650V IC = 800A 16 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (s) SWITCHING TIMES (s) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 2.5 2 Mar. 2001 |
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